A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips.

An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.

A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems.

Wireless communication systems have undergone significant development in recent years, particularly with the transition from fourth generation (4G) to fifth generation (5G). As the number of wireless devices and mobile data usage increase, there is a growing need for enhancements and upgrades to the current wireless communication systems. CMOS transceivers are increasingly being explored to meet the requirements of the latest wireless communication protocols and applications while achieving the goal of system-on-chip (SoC).

A Wide-Bandwidth PVT-Reconfigurable CMOS Power Amplifier with an Integrated Tunable-Output Impedance Matching Network.

This paper proposes a wideband CMOS power amplifier (PA) with integrated digitally assisted wideband pre-distorter (DAWPD) and a transformer-integrated tunable-output impedance matching network. As a continuation of our previous research, which focused only on linearization tuning for wideband and PVT, this work emphasized improving the maximum output power, gain and PAE across the PVT variations while maintaining the linearity for a wide frequency bandwidth of 1 GHz. The DAWPD is employed at the driver stage to realize a pre-distorting characteristic for wideband linearization.

CMOS Radio Frequency Energy Harvester (RFEH) with Fully On-Chip Tunable Voltage-Booster for Wideband Sensitivity Enhancement.

Radio frequency energy harvesting (RFEH) is one form of renewable energy harvesting currently seeing widespread popularity because many wireless electronic devices can coordinate their communications via RFEH, especially in CMOS technology. For RFEH, the sensitivity of detecting low-power ambient RF signals is the utmost priority. The voltage boosting mechanisms at the input of the RFEH are typically applied to enhance its sensitivity.

A 53-µA-Quiescent 400-mA Load Demultiplexer Based CMOS Multi-Voltage Domain Low Dropout Regulator for RF Energy Harvester.

A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.