Designing Strained Interface Heterostructures for Memristive Devices.

Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd Ce O /Er O to set and tune the property of "memristance." The modulation of interfacial strain and the interface count is used to engineer the R /R ratio and the persistence of the system. A model describing the variation of mixed ionic-electronic mobilities and defect concentrations is presented.

Role of Associated Defects in Oxygen Ion Conduction and Surface Exchange Reaction for Epitaxial Samaria-Doped Ceria Thin Films as Catalytic Coatings.

Samaria-doped ceria (SDC) thin films are particularly important for energy and electronic applications such as microsolid oxide fuel cells, electrolyzers, sensors, and memristors. In this paper, we report a comparative study investigating ionic conductivity and surface reactions for well-grown epitaxial SDC films varying the samaria doping concentration. With increasing doping above 20 mol % of samaria, an enhancement in the defect association is observed by Raman spectroscopy.

The effect of mechanical twisting on oxygen ionic transport in solid-state energy conversion membranes.

Understanding 'electro-chemo-mechanics' in oxygen ion conducting membranes represents a foundational step towards new energy devices such as micro fuel cells and oxygen or fuel separation membranes. For ionic transport in macro crystalline electrolytes, doping is conventionally used to affect oxygen ionic association/migration energies. Recently, tuning ionic transport in films through lattice strain conveyed by substrates or heterostructures has generated much interest.

A microdot multilayer oxide device: let us tune the strain-ionic transport interaction.

In this paper, we present a strategy to use interfacial strain in multilayer heterostructures to tune their resistive response and ionic transport as active component in an oxide-based multilayer microdot device on chip. For this, fabrication of strained multilayer microdot devices with sideways attached electrodes is reported with the material system Gd0.1Ce0.