Exploring Area-Dependent PrCaMnO-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks.

Memristive devices are novel electronic devices, which resistance can be tuned by an external voltage in a non-volatile way. Due to their analog resistive switching behavior, they are considered to emulate the behavior of synapses in neuronal networks. In this work, we investigate memristive devices based on the field-driven redox process between the p-conducting PrCaMnO (PCMO) and different tunnel barriers, namely, AlO, TaO, and WO.

Role of solvents in the electronic transport properties of single-molecule junctions.

We report on an experimental study of the charge transport through tunnel gaps formed by adjustable gold electrodes immersed into different solvents that are commonly used in the field of molecular electronics (ethanol, toluene, mesitylene, 1,2,4-trichlorobenzene, isopropanol, toluene/tetrahydrofuran mixtures) for the study of single-molecule contacts of functional molecules. We present measurements of the conductance as a function of gap width, conductance histograms as well as current-voltage characteristics of narrow gaps and discuss them in terms of the Simmons model, which is the standard model for describing transport via tunnel barriers, and the resonant single-level model, often applied to single-molecule junctions. One of our conclusions is that stable junctions may form from solvents as well and that both conductance-distance traces and current-voltage characteristics have to be studied to distinguish between contacts of solvent molecules and of molecules under study.