Nanotransplantation Printing of Crystallographic-Orientation-Controlled Single-Crystalline Nanowire Arrays on Diverse Surfaces.

The fabrication of a highly ordered array of single-crystalline nanostructures prepared from solution-phase or vapor-phase synthesis methods is extremely challenging due to multiple difficulties of spatial arrangement and control of crystallographic orientation. Herein, we introduce a nanotransplantation printing (NTPP) technique for the reliable fabrication, transfer, and arrangement of single-crystalline Si nanowires (NWs) on diverse substrates. NTPP entails (1) formation of nanoscale etch mask patterns on conventional low-cost Si via nanotransfer printing, (2) two-step combinatorial plasma etching for defining Si NWs, and (3) detachment and transfer of the NWs onto various receiver substrates using an infiltration-type polymeric transfer medium and a solvent-assisted adhesion switching mechanism.

In Situ Nanolithography with Sub-10 nm Resolution Realized by Thermally Assisted Spin-Casting of a Self-Assembling Polymer.

In situ nanolithography is realized based on warm spin-casting of block copolymer solutions. This advancement is based on Si-containing block copolymers with an appropriate thermodynamic driving force for spontaneous phase-separation combined with the thermal assistance provided by slight temperature elevations during the spin-casting. Sub-10 nm half-pitch nanoscale patterns are produced within 30 s without a separate annealing process.

Flexible one diode-one phase change memory array enabled by block copolymer self-assembly.

Flexible memory is the fundamental component for data processing, storage, and radio frequency communication in flexible electronic systems. Among several emerging memory technologies, phase-change random-access memory (PRAM) is one of the strongest candidate for next-generation nonvolatile memories due to its remarkable merits of large cycling endurance, high speed, and excellent scalability. Although there are a few approaches for flexible phase-change memory (PCM), high reset current is the biggest obstacle for the practical operation of flexible PCM devices.

High-resolution nanotransfer printing applicable to diverse surfaces via interface-targeted adhesion switching.

Nanotransfer printing technology offers outstanding simplicity and throughput in the fabrication of transistors, metamaterials, epidermal sensors and other emerging devices. Nevertheless, the development of a large-area sub-50 nm nanotransfer printing process has been hindered by fundamental reliability issues in the replication of high-resolution templates and in the release of generated nanostructures. Here we present a solvent-assisted nanotransfer printing technique based on high-fidelity replication of sub-20 nm patterns using a dual-functional bilayer polymer thin film.