The Transcriptomic Response of Cells of the Thermophilic Bacterium to Terahertz Irradiation.

As areas of application of terahertz (THz) radiation expand in science and practice, evidence is accumulating that this type of radiation can affect not only biological molecules directly, but also cellular processes as a whole. In this study, the transcriptome in cells of the thermophilic bacterium was analyzed immediately after THz irradiation (0.23 W/cm, 130 μm, 15 min) and at 10 min after its completion.

Electrical and Recombination Properties of Polar Orthorhombic κ-GaO Films Prepared by Halide Vapor Phase Epitaxy.

In this study, the structural and electrical properties of orthorhombic κ-GaO films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-GaO/AlN/Si structures, the formation of two-dimensional hole layers in the GaO was studied and, based on theoretical calculations, was explained by the impact of the difference in the spontaneous polarizations of κ-GaO and AlN. Structural studies indicated that in the thickest κ-GaO/GaN/sapphire layer used, the formation of rotational nanodomains was suppressed.

X-band EPR setup with THz light excitation of Novosibirsk Free Electron Laser: Goals, means, useful extras.

Electron Paramagnetic Resonance (EPR) station at the Novosibirsk Free Electron Laser (NovoFEL) user facility is described. It is based on X-band (∼9 GHz) EPR spectrometer and operates in both Continuous Wave (CW) and Time-Resolved (TR) modes, each allowing detection of either direct or indirect influence of high-power NovoFEL light (THz and mid-IR) on the spin system under study. The optics components including two parabolic mirrors, shutters, optical chopper and multimodal waveguide allow the light of NovoFEL to be directly fed into the EPR resonator.

Three-wave X-ray diffraction in distorted epitaxial structures.

Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on -sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured.

Magnetic properties of multiferroics-semiconductors Eu(1-x)Ce(x)Mn2O5.

Studies of magnetization, magnetoresistance, and magnetic oscillations in semiconductor-multiferroics Eu(1-x)Ce(x)Mn2O5 (x = 0.2-0.25) (ECMO) at temperatures ranging from 5 to 350 K in magnetic fields up to 6 T are presented.

Commissioning of the accelerator-recuperator for the FEL at the Siberian Center for Photochemical Research.

A 100 MeV eight-turn accelerator-recuperator intended to drive a high-power infrared free-electron laser (FEL) is currently under construction in Novosibirsk. The first stage of the machine includes a one-turn accelerator-recuperator that contains a full-scale RF system. It was commissioned successfully in June 2002.