Publications by authors named "Satyendra Pal"

Energy-dependent partial differential ionization cross sections at constant incident electron energies and their integral cross sections for -butane (-CH) by electron impact corresponding to the formation of various major cations are calculated using a revisited Jain-Khare semiempirical formulation. Averaged energies of the secondary electrons are also derived from the differential cross sections. The ionization rate coefficients as a function of the temperature are evaluated from integral partial ionization cross sections and Maxwell-Boltzmann energy distributions.

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Advances in nanofabrication techniques have made it feasible to observe damping phenomena beyond the linear regime in nanomechanical systems. In this work, we report cubic nonlinear damping in palladium nanomechanical resonators. Nanoscale palladium beams exposed to a H atmosphere become softer and display enhanced Duffing nonlinearity as well as nonlinear damping at ultralow temperatures.

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We describe the recent progress in the development of the semiempirical approach developed by Jain and Khare for the calculations of ionization cross sections for molecules by electron impact. Along with the state-of-the-art description of this approach, the emphasis will be on the evaluation of cross sections for a carbon dimer, C, and trimer, C. Single-differential ionization cross sections as a function of secondary or ejected electron energy and averaged secondary electron energy for C and C are calculated at fixed impinging electron energies of 100 and 200 eV.

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Recently, a number of ternary half-Heusler compounds have been predicted independently by several research groups as candidates for 3D topological insulators. In this work, we report the observation of a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hall-marks of topological surface states, and Shubnikov-de Hass (SdH) quantum oscillations in <110> oriented DyPdBi (DPB) thin films grown on MgO (100) substrates. The films prepared by pulsed laser deposition technique under the optimized conditions, showed a textured structure with (110) planes parallel to the (100) plane of MgO.

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The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.

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Rationale: Electron collision with methyl halides CH(3)X (X  =  F, Cl, Br) plays an important role in various atmospheric and plasma modelling processes. The gaseous methyl halides are harmful to the troposphere and the stratospheric ozone layer. Knowledge of the ionization cross sections and ionization rate coefficients of the free gaseous halides is therefore desirable in the study of these processes.

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Single and double differential ionization cross sections for the production of ions resulting from dissociative, single and double ionization of SF(6) by electron impact have been calculated using a semiempirical formulation based on the Jain-Khare approach. In addition, triple differential cross sections have been obtained for some of the doubly charged fragment ions at an incident electron energy of 100, 150, and 200 eV, respectively, and a fixed scattering angle of 30 degrees. As no previous data seem to exist for differential cross sections we have derived from these differential cross sections corresponding partial and total ionization cross sections from threshold up to 900 eV and compared those with the available theoretical and experimental data.

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