Time-domain Brillouin scattering (TDBS) is a developing technique for imaging/evaluation of materials, currently used in material science and biology. Three-dimensional imaging and characterization of polycrystalline materials has been recently reported, demonstrating evaluation of inclined material boundaries. Here, the TDBS technique is applied to monitor the destruction of a lithium niobate single crystal upon non-hydrostatic compression in a diamond anvil cell.
View Article and Find Full Text PDFWe applied time-domain Brillouin scattering (TDBS) for the characterization of porogen-based organosilicate glass (OGS) films deposited by spin-on-glass technology and cured under different conditions. Although the chemical composition and porosity measured by Fourier-transform infrared (FTIR) spectroscopy and ellipsometric porosimetry (EP) did not show significant differences between the films, remarkable differences between them were revealed by the temporal evolution of the Brillouin frequency (BF) shift of the probe light in the TDBS. The observed modification of the BF was a signature of the light-induced modification of the films in the process of the TDBS experiments.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2021
Wide-range continuous spatial variation of the film composition in lateral compositionally graded epitaxial films requires the development of high throughput measurement techniques for their local and non-destructive characterization with the highest possible spatial resolution. Here we report on the first application of the picosecond laser ultrasonics (PLU) technique for the evaluation of acoustical and optical parameters of lateral compositionally graded film, the BaSrTiO (0 ≤ x ≤ 1) material library. The film was not dedicatedly prepared for its opto-acousto-optic evaluation by PLU, exhibiting significant lateral variations in thickness and surface roughness.
View Article and Find Full Text PDFVan der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate.
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