Publications by authors named "Sascha Preu"

A new 3D micro-nano integrated M-shaped carbon nanotube (CNT) architecture was designed and fabricated. It is based on vertically aligned carbon nanotube arrays composed of low-density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure.

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Photonic millimeter wave and terahertz frequency generation and detection benefit from a large tunability of several octaves as opposed to electronic frequency generation and multiplication. However, reaching multiple 100 GHz continuous tuning range while simultaneously featuring a 3-dB linewidth in the Hz range and low phase noise is still very challenging. We present an electro-optical comb driving a photomixer with potential usability as an extension module based on side-band generation by an electro-optical phase modulator.

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Article Synopsis
  • Field-effect transistors can detect electromagnetic radiation from less than 100 GHz to 30 THz, including important ranges for CO lasers.
  • A study on these transistors reveals how their speed and sensitivity depend on frequency and polarization.
  • There is a transition in detection methods: at lower Terahertz frequencies, the mechanism is ultrafast non-quasistatic rectification, while at higher frequencies (around 10 THz), it shifts to slower rectification influenced by Seebeck and bolometric effects.
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We use a high-sampling rate terahertz (THz) homodyne spectroscopy system to estimate thoracic movement from healthy subjects performing breathing at different frequencies. The THz system provides both the amplitude and phase of the THz wave. From the raw phase information, a motion signal is estimated.

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Material characterisation and imaging applications using terahertz radiation have gained interest in the past few years due to their enormous potential for industrial applications. The availability of fast terahertz spectrometers or multi-pixel terahertz cameras has accelerated research in this domain. In this work, we present a novel vector-based implementation of the gradient descent algorithm to fit the measured transmission and reflection coefficients of multilayered objects to a scattering parameter-based model, without requiring any analytical formulation of the error function.

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We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.

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Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device - a process usually referred to as photomixing.

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The resolution along the propagation direction of far field imagers can be much smaller than the wavelength by exploiting coherent interference phenomena. We demonstrate a height profile precision as low as 31 nm using wavelengths between 0.375 mm and 0.

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Surface states generally degrade semiconductor device performance by raising the charge injection barrier height, introducing localized trap states, inducing surface leakage current, and altering the electric potential. We show that the giant built-in electric field created by the surface states can be harnessed to enable passive wavelength conversion without utilizing any nonlinear optical phenomena. Photo-excited surface plasmons are coupled to the surface states to generate an electron gas, which is routed to a nanoantenna array through the giant electric field created by the surface states.

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We demonstrate a free space two-port photonic vector network analyzer capable of measuring the scattering parameters of devices and materials in the terahertz range with a frequency coverage of 0.2 - 2 THz in a single system. It is based on photoconductive terahertz sources and detectors driven by a telecom-wavelength femtosecond laser.

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Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.

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We present an efficient Schottky-diode detection scheme for Terahertz (THz) radiation, implemented on the material system epitaxial graphene on silicon carbide (SiC). It employs SiC as semiconductor and graphene as metal, with an epitaxially defined interface. For first prototypes, we report on broadband operation up to 580 GHz, limited only by the RC circuitry, with a responsivity of 1.

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We investigate the performance of terahertz (THz) quasi time-domain systems (QTDS) driven by electrically pulsed multi-mode laser diodes operating at 659 nm. We show that at the same average output power, a reduced duty cycle considerably increases the obtained bandwidth. In the presented experiment, the high frequency performance is improved by 50 dB/THz.

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Gasoline engine oil (SAE 5W-20) was subjected to thermal oxidization (TO) for four periods of time (0 h, 48 h, 96 h and 144 h) and exposed to THz-time domain spectroscopy (TDS) measurement. Error contributions from various error sources, such as repeatability errors, assembly errors of the probe volume and errors caused by the TDS system were evaluated with respect to discernibility and significance of measurement results. The most significant error source was due to modifications of the TDS setup, causing errors in the range of 0.

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We report frequency-tunable terahertz (THz) generation with a photomixer driven by an ultra-broadband tunable micro-electro-mechanical system vertical-cavity surface-emitting laser (MEMS-VCSEL) and a fixed-wavelength VCSEL, as well as a tunable MEMS-VCSEL mixed with a distributed feedback (DFB) diode. A total frequency span of 3.4 THz is covered in direct detection mode and 3.

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We report on ultrafast detection of radiation between 100 GHz and 22 THz by field-effect transistors in a large area configuration. With the exception of the Reststrahlenband of GaAs, the spectral coverage of the GaAs-based detectors is more than two orders of magnitude, covering the entire THz range (100 GHz - 10 THz). The temporal resolution of the robust devices is yet limited by the 30 GHz oscilloscope used for read out.

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We experimentally demonstrate an order of magnitude enhancement in the quasi-continuous-wave radiated power from a photomixer with plasmonic contact electrodes in comparison with an analogous conventional photomixer without plasmonic contact electrodes in the 0.25-2.5 THz frequency range when pumped at an optical wavelength of 1550 nm.

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Plasmonic effects have proven to be very efficient in coupling light to structures much smaller than its wavelength. Efficient coupling is particularly important for the infrared or terahertz (λ ∼ 0.3 mm) region where semiconductor structures and devices may be orders of magnitude smaller than the wavelength and this can be achieved through nanostructures that have a desired plasmonic response.

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