Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.

We study the effect of thermal annealing on the electrical properties of the nanoscale - heterojunctions based on single -type ZnO nanorods on -type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope.