Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces.

Ordered, low coverage to monolayer, high-κ oxide adsorption on group III rich InAs(0 0 1)-(4×2) and In(0.53)Ga(0.47)As(0 0 1)-(4×2) was modeled via density functional theory (DFT).

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2).

Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In(0.53)Ga(0.47)As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO(2).

Dynamics of analyte binding onto a metallophthalocyanine: NO/FePc.

The gas-surface reaction dynamics of NO impinging on an iron(II) phthalocyanine (FePc) monolayer were investigated using King and Wells sticking measurements. The initial sticking probability was measured as a function of both incident molecular beam energy (0.09-0.