Magnetically Hard Fe3Se4 Embedded in Bi2Se3 Topological Insulator Thin Films Grown by Molecular Beam Epitaxy.

We investigated the structural, magnetic, and electronic properties of Bi2Se3 epilayers containing Fe grown on GaAs(111) by molecular beam epitaxy. It is shown that, in the window of growth parameters leading to Bi2Se3 epilayers with optimized quality, Fe atom clustering leads to the formation of FexSey inclusions. These objects have platelet shape and are embedded within Bi2Se3.

Combinatorial growth and anisotropy control of self-assembled epitaxial ultrathin alloy nanowires.

Self-assembled vertical epitaxial nanostructures form a new class of heterostructured materials that has emerged in recent years. Interestingly, such kind of architectures can be grown using combinatorial processes, implying sequential deposition of distinct materials. Although opening many perspectives, this combinatorial nature has not been fully exploited yet.