Publications by authors named "Santina Bevilacqua"
Micromachines (Basel)
June 2024
Article Synopsis
- - This paper examines how positive bias temperature instability (PBTI) affects the threshold voltage shift (ΔV) in silicon carbide (SiC) power MOSFETs at high temperatures (150 °C).
- - Two primary mechanisms are identified for ΔV: trapping in existing defects at the interface and the formation of new oxide defects, which occur at a specific energy level (~80 meV).
- - Different methods of analysis show consistent patterns in ΔV degradation across various gate stress voltages, offering valuable insights for improving the reliability of SiC MOSFETs.
