Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction.

Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history.

Large Magnetoresistance of Isolated Domain Walls in La Sr MnO Nanowires.

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half-metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La Sr MnO (LSMO) manganites are considered as promising candidates for their robust half-metallic ground state, Curie temperature above room temperature (T = 360 K, for x = 1/3), and chemical stability.

Nanoscale magnetic and charge anisotropies at manganite interfaces.

Strong correlated manganites are still under intense research owing to their complex phase diagrams in terms of Sr-doping and their sensitivity to intrinsic and extrinsic structural deformations. Here, we performed X-ray absorption spectroscopy measurements of manganite bilayers to explore the effects that a local Sr-doping gradient produce on the charge and antiferromagnetic anisotropies. In order to gradually tune the Sr-doping level along the axis perpendicular to the samples we have grown a series of bilayers with different thicknesses of low-doped manganites (from 0 nm to 6 nm) deposited over a LaSrMnO metallic layer.