Amorphous TaMnO Layer as a Diffusion Barrier for Advanced Copper Interconnects.

An amorphous TaMnO layer with 1.0 nm thickness was studied as an alternative Cu diffusion barrier for advanced interconnect. The thermal and electrical stabilities of the 1.

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect.

The size of the advanced Cu interconnects has been significantly reduced, reaching the current 7.0 nm node technology and below. With the relentless scaling-down of microelectronic devices, the advanced Cu interconnects thus requires an ultrathin and reliable diffusion barrier layer to prevent Cu diffusion into the surrounding dielectric.