Kerf-Less Exfoliated Thin Silicon Wafer Prepared by Nickel Electrodeposition for Solar Cells.

Ultra-thin and large-area silicon wafers with a thickness in the range of 20-70 μm, were produced by spalling using a nickel stressor layer. A new equation for predicting the thickness of the spalled silicon was derived from the Suo-Hutchinson mechanical model and the kinking mechanism. To confirm the reliability of the new equation, the proportional factor of stress induced by the nickel on the silicon wafer, was calculated.