Optimization of Thermoelectric Nanoantenna for Massive High-Output-Voltage Arrays.

Thermoelectric nanoantennas have been extensively investigated due to their ability to directly convert infrared (IR) radiation into direct current without an additional rectification device. In this study, we introduce a thermoelectric nanoantenna geometry for maximum output voltage () and propose an optimal series array configuration with a finite number of antennas to enhance the . A finite and open-ended SiO substrate, with a thickness of a quarter-effective wavelength at a frequency of 28.

Bowtie Nanoantenna Coupled Metal-Oxide-Silicon (p-Doped) Diode for 28.3 THz IR Rectification.

Low-temperature waste heat in the infrared (IR) wavelength region offers an opportunity to harvest power from waste energy and requires further investigation in order to find efficient conversion techniques. Although grating-coupled metal-oxide-semiconductor (MOS) diode devices offer efficient conversion from low and moderate-temperature thermal sources, the integration of such diodes with a nanoantenna structure has yet to be explored. We propose a bowtie nanoantenna coupled with a p-doped MOS diode for IR to direct current (DC) conversion without any bias voltage at 28.

Compact Double-Layer FR4-Based Focusing Lens Using High-Efficiency Huygens' Metasurface Unit Cells.

High transmission efficiency metasurface unit cells have been designed based on surface electric and magnetic impedances derived from Huygens' principle. However, unit cells for low transmission loss (<1 dB) over a wide transmission phase range require at least three metallic layers, which complicates the unit cell design process. In this paper, we introduce high-efficiency Huygens' metasurface unit cell topologies in double-layer FR4 printed circuit board (PCB) by implementing surface electric and magnetic current using the top and bottom metallic patterns and via drills.

Compact folded dipole metasurface for high anomalous reflection angles with low harmonic levels.

A dense unit cell array used in a metasurface for a high reflection angle (θ > 50°) leads to high coupling among the unit cells; thus, parasitic reflections are unavoidable. The up-do-date patch-based metasurfaces for high reflection angles were electrically large (> 80 λ), but for a practical point of view, a more compact metasurface design is needed. As a solution for these issues, we use the folded dipole-based unit cells with closed-loop currents for low near-field coupling and design compact metasurfaces (~ 40 λ) for high reflection angles (θ = 56° and 70°) at 10 GHz.

Non-Uniformly Powered and Spaced Corporate Feeding Power Divider for High-Gain Beam with Low SLL in Millimeter-Wave Antenna Array.

A corporate feeding antenna array with parasitic patches has been investigated previously for millimeter-wave applications due to its high gain and wide bandwidth. However, the parasitic patch integration in the uniformly powered and spaced patch antenna array led to a high sidelobe level (SLL). In this study, we designed a non-uniformly powered and spaced corporate feeding network to feed a 12-element parasitic patch-integrated microstrip antenna array for SLL reduction at 28 GHz in the millimeter-wave band.

Perfect Absorption Efficiency Circular Nanodisk Array Integrated with a Reactive Impedance Surface with High Field Enhancement.

Infrared (IR) absorbers based on a metal-insulator-metal (MIM) have been widely investigated due to their high absorption performance and simple structure. However, MIM absorbers based on ultrathin spacers suffer from low field enhancement. In this study, we propose a new MIM absorber structure to overcome this drawback.

Bowtie nanoantenna integrated with indium gallium arsenide antimonide for uncooled infrared detector with enhanced sensitivity.

A novel high-impedance nanoantenna with an embedded matching network is implemented to realize a highly sensitive infrared detector. A bowtie antenna is operated at its antiparallel resonance and loaded with a small low-bandgap (E(g)=0.52  eV) indium gallium arsenide antimonide (InGaAsSb) p-n junction.