One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors.

In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 10 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.