Decrease in work function of transparent conducting ZnO tin films by phosphorus ion implantation.

To confirm the possibility of engineering the work function of ZnO thin films, we have implanted phosphorus ions into ZnO thin films deposited by radio-frequency magnetron sputtering. The fabricated films show n-type characteristics. It is shown that the electrical and optical properties of those thin films vary depending sensitively on the ion dose and rapid thermal annealing time.

Work function increase of Al-doped ZnO thin films by B+ ion implantation.

The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV.

Decrease in work function of boron ion-implanted ZnO thin films.

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA) time, while decreasing as the ion dose increases.