J Colloid Interface Sci
October 2008
To reduce signal delay in ultra-large-scale integrated circuits, an intermetal dielectric with low dielectric constant is required. Ordered mesoporous silica film is appropriate for use as an intermetal dielectric due to its low dielectric constant and superior mechanical properties. To reduce the dielectric constant, an ordered mesoporous silica film prepared by a tetraethoxysilane/methyltriethoxysilane silica precursor and Brij-76 block copolymer was surface-modified by hexamethyldisilazane (HMDS) treatment.
View Article and Find Full Text PDFJ Colloid Interface Sci
April 2008
Organically modified, ordered mesoporous silica films, which can provide hydrophobicity and low polarizability to the framework, were prepared using Brij-76 block copolymer as a template. Due to a fast condensation reaction of the silica precursor, mesostructured silica films were not properly synthesized. To circumvent this problem, a synthesis procedure was modified to provide an enhancement of pore periodicity through the incorporation of methyl ligands on the framework.
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