High Breakdown Current Density in Quasi-1D van der Waals Layered Material TaNiSe.

We synthesized ternary composition chalcogenide TaNiSe, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of TaNiSe, the breakdown current density () according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage () increased, and at 18 nm thickness, 35 MA cm of was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material.

One-dimensional van der Waals stacked p-type crystal TaPtSe for nanoscale electronics.

Recently, ternary transition metal chalcogenides TaXSe (X = Pd or Pt) have attracted great interest as a class of emerging one-dimensional (1D) van der Waals (vdW) materials. In particular, TaPdSe has been actively studied owing to its excellent charge transport properties as an n-type semiconductor and ultralong ballistic phonon transport properties. Compared to subsequent studies on the Pd-containing material, TaPtSe, another member of this class of materials has been considerably less explored despite its promising electrical properties as a p-type semiconductor.

Ta Ni Se : 1D van der Waals Material with Ambipolar Behavior.

In this study, high-purity and centimeter-scale bulk Ta Ni Se crystals are obtained by controlling the growth temperature and stoichiometric ratio between tantalum, nickel, and selenium. It is demonstrated that the bulk Ta Ni Se crystals could be effectively exfoliated into a few chain-scale nanowires through simple mechanical exfoliation and liquid-phase exfoliation. Also, the calculation of electronic band structures confirms that Ta Ni Se is a semiconducting material with a small bandgap.