Gas sensing response of ion beam irradiated Ga-doped ZnO thin films.

The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag and Si irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag ion irradiated Ga-doped ZnO thin was optimized at different operating temperature.

Annealing Effects on Gas Sensing Response of Ga-Doped ZnO Thin Films.

The high thermal conductivity, high electron mobility, the direct wide band gap, and large exciton binding energy of zinc oxide (ZnO) make it appropriate for a wide range of device applications like light-emitting diodes, photodetectors, laser diodes, transparent thin-film transistors, and so forth. Among the semiconductor metal oxides, zinc oxide (ZnO) is one of the most commonly used gas-sensing materials. The gas sensor made of nanocomposite ZnO and Ga-doped ZnO (ZnO:Ga) thin films was developed by the sol-gel spin coating method.