An integrated photonic device for on-chip magneto-optical memory reading.

This study presents the design, fabrication and experimental demonstration of a magneto-photonic device that delivers non-volatile photonic memory functionality. The aim is to overcome the energy and speed bottleneck of back-and-forth signal conversion between the electronic and optical domains when retrieving information from non-volatile memory. The device combines integrated photonic components based on the InP membrane on silicon (IMOS) platform and a non-volatile, built-in memory element (ferromagnetic thin-film multilayers) realized as a top-cladding on the photonic waveguides (a post-processing step).

Anti-reflection subwavelength gratings for InP-based waveguide facets.

We demonstrate the anti-reflection properties of lithographically defined subwavelength gratings applied to the facets of integrated waveguides realized in the InP membrane-on-silicon platform. The subwavelength gratings are based on the gradient index effect to create a smooth index transition between the core material and air, making it possible to obtain reflections below -30 at a wavelength of 1550 nm for both TE and TM polarized modes, as shown by 3D finite-difference time-domain simulations. Characterizations performed using Mach-Zehnder interferometers as test structures show relative reflections as low as -25, confirming the effectiveness of the technique.