Inkjet-Printed, High-Performance MoS Transistors and Unipolar Logic Electronics.

Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport.

Inkjet-Printed MoS Transistors with Predominantly Intraflake Transport.

2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large-enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent-exfoliated TMD-nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter-flake transport in solution-cast 2D-TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate.

Mobile apps for SME business sustainability during COVID-19 and onwards.

Small and Medium-Sized Enterprises (SMEs) are struggling to cope with the business uncertainty caused by the COVID-19 pandemic. This study examines how SMEs in developing economies have used mobile apps to improve their business efficiency during the pandemic. We aim to recognize effective measures and actions taken by SMEs that have turned to mobile-app-based business to improve their sustainability during the crisis.

Optimization of decoupling point position using metaheuristic evolutionary algorithms for smart mass customization manufacturing.

Unlabelled: In this paper, we present two metaheuristic evolutionary algorithms-based approaches to position the customer order decoupling point (CODP) in smart mass customization (SMC). SMC tries to autonomously mass customize and produce products per customer needs in Industry 4.0.

Inkjet-printed co-continuous mesoporous oxides for high-current power transistors.

Limited printing resolution has always been a major hindrance for printed electronics; irrespective of the high mobility demonstrated by solution-processed semiconductors, long-channel printed field-effect transistors (FETs) have demonstrated low On-state conductance and switching speeds. Although various concepts have been proposed to obtain narrow-channel printed FETs, the actual demonstration of high On-currents/channel conductance has been rare. In this context, herein, we report a general recipe to print co-continuous mesoporous structures with high surface-to-volume ratios for the first time for a large range of metallic and semiconducting oxides, both n- and p-type; next, by exploiting an innovative transistor architecture by printing an additional silver layer on top of the printed porous channel, we reduced the necessary length of electronic transport through the semiconductor material to a short vertical distance of the order of a few tens of nanometres.

Effect of semiconductor surface homogeneity and interface quality on electrical performance of inkjet-printed oxide field-effect transistors.

In semiconductor technology, the crystallite size of semiconductors is often directly correlated with their superior intrinsic and device mobility. However, when solution-processed, large crystals may bring in higher surface roughness and layer inhomogeneity, which can deteriorate the interface quality and device performance. Along this line, a thorough study on printed oxide field-effect transistors (FETs) has been performed, where the relative significance of crystallite size, surface roughness and spatial homogeneity are evaluated.

High-Performance All-Printed Amorphous Oxide FETs and Logics with Electronically Compatible Electrode/Channel Interface.

Oxide semiconductors typically show superior device performance compared to amorphous silicon or organic counterparts, especially when they are physical vapor deposited. However, it is not easy to reproduce identical device characteristics when the oxide field-effect transistors (FETs) are solution-processed/printed; the level of complexity further intensifies with the need to print the passive elements as well. Here, we developed a protocol for designing the most electronically compatible electrode/channel interface based on the judicious material selection.