Dual parameter smart sensor for nitrogen and temperature sensing based on defect-engineered 1T-MoS.

In general, defects are crucial in designing the different properties of two-dimensional materials. Therefore large variations in the electric and optical characteristics of two-dimensional layered molybdenum disulphide might be attributed to defects. This study presents the design of a temperature and nitrogen sensor based on few-layer molybdenum disulfide sheets (FLMS), which was developed from bulk MoS (BMS) through an exfoliation approach.

3-Polythiophene Acetic Acid Nanosphere Anchored Few-Layer Graphene Nanocomposites for Label-Free Electrochemical Immunosensing of Liver Cancer Biomarker.

This study devised a label-free electrochemical immunosensor for the quantitative detection of alpha-fetoprotein (AFP). 3-Polythiophene acetic acid (3-PTAA) nanoparticles were anchored onto a few-layer graphene (FLG) nanosheet, and the resulting nanocomposite was utilized as the immunosensor platform. The AFP antibody (anti-AFP) was immobilized on 3-PTAA@FLG via a covalent interaction between the amine group of anti-AFP and the carboxylic group of 3-PTAA via ethyl-3-(3-dimethyl aminopropyl) carbodiimide (EDC)/-hydroxysuccinimide (NHS) coupling.

Green synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites and its electrical and antibacterial properties.

A green, efficient synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites (RGO/CdO) was prepared by one-step co-precipitation and hydrothermal method. Crystalline nature of the nanocomposites was characterized by X-ray diffraction analysis. To evaluate the structural morphology and particle size, high resolution transmission electron microscopy were used.

Dielectric properties of plasma membrane: A signature for dyslipidemia in diabetes mellitus.

Dielectric properties of a living biological membrane play crucial role indicating the status of the cell in pathogenic or healthy condition. A distinct variation in membrane capacitance and impedance was observed for peripheral blood mononuclear cell (PBMC) suspensions for diabetic and diabetic-dyslipidemic subjects compared to healthy control. Low frequency region were explicitly considered in electrical analysis to address complex membrane dielectric factors that alter the system capacitance of a PBMC suspension.

FT-MIR supported Electrical Impedance Spectroscopy based study of sugar adulterated honeys from different floral origin.

This study sought to detect the presence of sucrose as an adulterant in selected honey varieties from different floral origins by employing Electrical Impedance Spectroscopy (EIS) technique which has been simultaneously supported by Fourier Transform-Mid Infrared Spectroscopy (FT-MIR) measurements to provide a rapid, robust yet simple platform for honey quality evaluation. Variation of electrical parameters such as impedance, capacitance and conductance for 10%, 20%, 30%, 40%, 50%, 60% and 70% (w/w) sucrose syrup (SS) adulterated honey samples are analyzed and their respective current-voltage (I-V) characteristics are studied. Capacitance, conductance and net current flowing through the system are observed to decrease linearly whereas system impedance has been found to increase similarly with the increase in adulterant content.

Synthesis of HPMC stabilized nickel nanoparticles and investigation of their magnetic and catalytic properties.

Nickel nanoparticles synthesized from NiCl2·6H2O by hydrazine hydrate in mixed solvent of ethanol and water in the presence of hydroxypropylmethylcellulose (HPMC) as protective and stabilizing agents. The morphology and sizes of synthesized Ni nanoparticles were studied by field-emission-scanning-electron microscopy (FESEM). Structural properties of nanoparticles were examined by X-ray diffraction (XRD).

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3.