Publications by authors named "Samuel J Magorrian"
In bilayers of two-dimensional semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs)-in particular, [Formula: see text]-for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
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- Van der Waals heterostructures, created by stacking and twisting layers, form moiré superlattices that enhance the optical and electronic properties in solid-state materials.
- In twisted bilayers of transition metal dichalcogenides (TMDs), these moiré lattices lead to phenomena like exciton trapping, Mott insulating states, and superconductivity, which can be optically manipulated.
- The study focuses on MoSe/MoSe bilayers with large AB/BA domains, showing that the crystal symmetry allows for control over exciton properties and hints at potential applications in advanced technologies like topological systems and quantum emitters.
Control over the quantization of electrons in quantum wells is at the heart of the functioning of modern advanced electronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. However, this avenue has not been explored in the case of 2D materials. Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated crystals to control the quantum well dimensions in few-layer semiconductor InSe.
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