Measurement of Time Dependent Reflection, Transmission, and Absorption in Laser Driven Silicon and GaAs Switches for 250 GHz Radiation.

The reflectance and transmittance of Si and GaAs wafers irradiated by a 6 ns pulsed, 532 nm laser have been studied for s- and p-polarized 250 GHz radiation as a function of laser fluence and time. The measurements were carried out using precision timing of the and signals, allowing an accurate determination of the absorptance where . Both wafers had a maximum reflectance above 90% for a laser fluence .

Apparatus for controlled microwave exposure of aerosolized pathogens.

A set of three apparatus enabling RF exposure of aerosolized pathogens at four chosen frequencies (2.8 GHz, 4.0 GHz, 5.

Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron.

A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 s, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance.

Time-resolved loading of monomers into bilayers with different curvature.

Directed assembly of nanostructures within temporary and recyclable self-assembled scaffolds is emerging as an attractive method for the synthesis of nanomaterials with programmed properties. Understanding interactions of building blocks with amphiphilic scaffolds is critical for rational design of new nanostructures and nanodevices. Here we examine loading of hydrophobic monomers into bilayers with different curvatures.