Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots.

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport.

Quantum logic with spin qubits crossing the surface code threshold.

High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault tolerance-the ability to correct errors faster than they occur. The central requirement for fault tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the approximately 1% error threshold of the well-known surface code.

CMOS-based cryogenic control of silicon quantum circuits.

The most promising quantum algorithms require quantum processors that host millions of quantum bits when targeting practical applications. A key challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, an important interconnect bottleneck appears between the quantum chip in a dilution refrigerator and the room-temperature electronics.

Author Correction: Rapid gate-based spin read-out in silicon using an on-chip resonator.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Rapid gate-based spin read-out in silicon using an on-chip resonator.

Silicon spin qubits are one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states.

Electron-electron interactions and the paired-to-nematic quantum phase transition in the second Landau level.

In spite of its ubiquity in strongly correlated systems, the competition of paired and nematic ground states remains poorly understood. Recently such a competition was reported in the two-dimensional electron gas at filling factor ν = 5/2. At this filling factor a pressure-induced quantum phase transition was observed from the paired fractional quantum Hall state to the quantum Hall nematic.

Strong spin-photon coupling in silicon.

Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator.

Integrated electronic transport and thermometry at milliKelvin temperatures and in strong magnetic fields.

We fabricated a He-3 immersion cell for transport measurements of semiconductor nanostructures at ultra low temperatures and in strong magnetic fields. We have a new scheme of field-independent thermometry based on quartz tuning fork Helium-3 viscometry which monitors the local temperature of the sample's environment in real time. The operation and measurement circuitry of the quartz viscometer is described in detail.