Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS for Brain-Inspired Artificial Learning.

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities toward developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS memtransistors, which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multilevel memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS/dielectric interface.

Reconfigurable Low-Power TiO Memristor for Integration of Artificial Synapse and Nociceptor.

Bio-mimetic advanced electronic systems are emerging rapidly, engrossing their applications in neuromorphic computing, humanoid robotics, tactile sensors, and so forth. The biological synaptic and nociceptive functions are governed by intricate neurotransmitter dynamics that involve both short-term and long-term plasticity. To emulate the neuronal dynamics in an electronic device, an Ag/TiO/Pt/SiO/Si memristor is fabricated, exhibiting compliance current controlled reversible transition of volatile switching (VS) and non-volatile switching (NVS).

Bipolar Resistive Switching in TiO Artificial Synapse Mimicking Pavlov's Associative Learning.

Memristive devices are among the most emerging electronic elements to realize artificial synapses for neuromorphic computing (NC) applications and have potential to replace the traditional von-Neumann computing architecture in recent times. In this work, pulsed laser deposition-manufactured Ag/TiO/Pt memristor devices exhibiting digital and analog switching behavior are considered for NC. The TiO memristor shows excellent performance of digital resistive switching with a memory window of order ∼10.

Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer [Formula: see text].

Strain-mediated magnetism in 2D materials and dilute magnetic semiconductors hold multi-functional applications for future nano-electronics. Herein, First principles calculations are employed to study the influence of biaxial strain on the magnetic properties of Co-doped monolayer [Formula: see text]. The non-magnetic [Formula: see text] shows ferromagnetic signature upon Co doping due to spin polarization, which is further improved at low compressive (-2 %) and tensile (+2 %) strains.

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO Resistive Random Access Memory Device.

The recent observation of stable quantized conductance in anatase TiO resistive random access memory (ReRAM) devices opens up a new pathway toward the realization of brain-inspired neuromorphic computing devices. Herein, for the first time, ab initio calculations are implemented to understand the resistive switching phenomena in anatase TiO. Oxygen vacancy configurations with different charge states are studied to gain insight into the ON and OFF states of ReRAM devices.

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy.

Low dimensional systems, nanowires (NWs), in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor NWs is very important for their applications in electronic devices. In the present study, the thermal conductivity of a freestanding silicon NW is estimated by employing Raman spectroscopy.