Harvesting electrical energy using plasmon-enhanced light pressure in a platinum cut cone.

We have designed a method of harvesting electrical energy using plasmon-enhanced light pressure. A device was fabricated as a cut cone structure that optimizes light collection so that the weak incident light pressure can be sufficiently enhanced inside the cut cone to generate electrical energy. An increase in the device's current output is a strong indication that the pressure of incident light has been enhanced by the surface plasmons on a platinum layer inside the cut cone.

Multiscale surface modified magneto-mechano-triboelectric nanogenerator enabled by eco-friendly NaCl imprinting stamp for self-powered IoT applications.

In this paper, we demonstrated a multiscale micro- and nano-structured magneto-mechano-triboelectric nanogenerator (MMTENG) enabled by a salt particle imprinting process to power an internet of thing (IoT) sensor. The fine salt particles were utilized to form a multiscale structure on a triboelectric polymer film by mechanical pressure via an eco-friendly, low-cost, and simple process, thereby reinforcing the contact triboelectrification and electrostatic induction. The surface modified MMTENG can generate an open-circuit peak-to-peak voltage of 851 V, a short-circuit current of 155 μA, and a maximum peak power of 10.

Changes in the Photoluminescence of Monolayer and Bilayer Molybdenum Disulfide during Laser Irradiation.

Various postsynthesis processes for transition metal dichalcogenides have been attempted to control the layer number and defect concentration, on which electrical and optical properties strongly depend. In this work, we monitored changes in the photoluminescence (PL) of molybdenum disulfide (MoS) until laser irradiation generated defects on the sample flake and completely etched it away. Higher laser power was required to etch bilayer MoS compared to monolayer MoS.

Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN.

We investigated the homogeneity and tolerance to heat of monolayer MoS using photoluminescence (PL) spectroscopy. For MoS on SiO, the PL spectra of the basal plane differ from those of the edge, but MoS on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS on SiO homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS monolayer caused a loss of its inherent crystal structure.