Cesium bismuth iodide perovskite material offers good stability toward ambient conditions and has potential optoelectronic characteristics. However, wide bandgap, absorber surface roughness, and poor surface coverage with pinholes are among the key impediments to its adoption as a photovoltaic absorber material. Herein, bandgap modification and the tailoring of surface morphology have been performed through molar ratio variation and antisolvent treatment, whereby type III antisolvent (toluene) based on Hansen space has been utilized.
View Article and Find Full Text PDFBismuth-based perovskites are potentially a promising alternative for lead-free perovskites. During bond formation, however, trivalent ions on Cs3Bi2I9 with CsI/BiI3 ratio of 1.5/1 form 0D-neutral charged compounds with higher bandgap (>2.
View Article and Find Full Text PDF