Publications by authors named "Sakura N Takeda"

To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candidates for this, but their quantum yield (QY) is known to be poor. Recently, a molecular superacid treatment of bis(trifluoromethane)sulfonimide (TFSI) generated unambiguously bright monolayer TMDCs and a high QY.

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To start a step such as some realization of minimized and integrated devices, it requires simply understanding the surface status of hybrid perovskite on the e-beam irradiation because many commercial semiconductor devices are performed with a surface patterning process using e-beam or etching gas. The surface status of CHNHPbBr (MAPbBr) single crystal was studied after a grazing e-beam irradiation in an ultra-high vacuum. The prepared hybrid perovskite single crystal was irradiated by the 3 degree-grazing e-beam with energy of 15 kV for 10 min using a reflection high-electron energy diffraction technique.

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The in-plane dispersion of the hole subband (HSB) in a Si quantum well is obtained for the first time by applying angle-resolved photoemission spectroscopy and surface science techniques. The entire shape of the HSB over a wide ranged wave vector, including admixing of heavy and light hole subbands around the crossing point and the camelback structure inducing negative effective mass, is visualized directly. Energy separations between the subbands are quantitatively explained.

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