Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor.

In this study, we design and simulate a metal implanted dielectrically modulated tunneling field-effect transistor (MI-DMTFET). In the ambipolar conduction state, the proposed structure works as an efficient sensor for the detection of a wide range of biomolecules. A metal strip (MS) is implanted above the drain-channel junction in the gate dielectric to improve the alignment of band gaps.

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO ferroelectric junctionless TFET biosensors.

In this work, we propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor. The proposed sensing device employs a dual inverted-T cavity and uses ferroelectric gate stacking of Si-doped HfO, a key enabler of negative capacitance (NC) behavior. The two cavities are carved in gate-source underlap regions by a sacrificial etching technique to sense biomolecules such as streptavidin (2.

Design, simulation and comparative analysis of CNT based cascode operational transconductance amplifiers.

In this work, design and calibrated simulation of carbon nanotube field effect transistor (CNTFET)-based cascode operational transconductance amplifiers (COTA) have been performed. Three structures of CNTFET-based COTAs have been designed using HSPICE and have been compared with the conventional CMOS-based COTAs. The proposed COTAs include one using pure CNTFETs and two others that employ CNTFETs, as well as the conventional MOSFETs.