Physical vapor deposition-free scalable high-efficiency electrical contacts to MoS.

Fermi-level pinning caused by the kinetic damage during metallization has been recognized as one of the major reasons for the non-ideal behavior of electrical contacts, forbidding reaching the Schottky-Mott limit. In this manuscript, we present a scalable technique wherein Indium, a low-work-function metal, is diffused to contact a few-layered MoSflake. The technique exploits a smooth outflow of Indium over gold electrodes to make edge contacts to pre-transferred MoSflakes.