Publications by authors named "Sahngik A Mun"
High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor.
ACS Appl Mater Interfaces
August 2024
Article Synopsis
- The work introduces a thin-film transistor (TFT) using tin monoxide (SnO) for neuromorphic computing, showcasing its ability to create a physical reservoir.
- The SnO TFT exhibits memory fading and nonlinearity, crucial for advanced computing, and its three-terminal design allows for more complex reservoir states compared to traditional two-terminal devices.
- This SnO TFT reservoir demonstrates outstanding performance in key tests, achieving high accuracy in handwritten digit recognition and time-series predictions, while also enabling high integration due to a low fabrication temperature.