Influence of Edges and Interlayer Electron-phonon Coupling in WS/h-BN Heterostructure.

The semiconducting layered transition metal dichalcogenides (e.g., WS) are excellent candidates for the realization of optoelectronic and nanophotonic applications on account of their band gap tunability, high binding energy and oscillator strength of the excitons, strong light-matter interaction, appreciable charge carrier mobility, and valleytronic properties.