Nonlinear ion drift-diffusion memristance description of TiO RRAM devices.

The nature and direction of the hysteresis in memristive devices is critical to device operation and performance and the ability to realise their potential in neuromorphic applications. TiO is a prototypical memristive device material and is known to show hysteresis loops with both clockwise switching and counter-clockwise switching and in many instances evidence of negative differential resistance (NDR) behaviour. Here we study the electrical response of a device composed of a single nanowire channel Au-Ti/TiO/Ti-Au both in air and under vacuum and simulate the - characteristics in each case using the Schottky barrier and an ohmic-like transport memristive model which capture nonlinear diffusion and migration of ions within the wire.

Switching at the contacts in GeSbTe phase-change nanowire devices.

Phase-change random access memory is a promising approach to non-volatile memory. However, the inability to secure consistent, reliable switching on a nanometre scale may limit its practical use for high density applications. Here, we report on the switching behaviour of PCRAM cells comprised of single crystalline GeSbTe (GST) nanowires.