Bifurcations and bursting in the Epileptor.

The Epileptor is a phenomenological model for seizure activity that is used in a personalized large-scale brain modeling framework, the Virtual Epileptic Patient, with the aim of improving surgery outcomes for drug-resistant epileptic patients. Transitions between interictal and ictal states are modeled as bifurcations, enabling the definition of seizure classes in terms of onset/offset bifurcations. This establishes a taxonomy of seizures grounded in their essential underlying dynamics and the Epileptor replicates the activity of the most common class, as observed in patients with focal epilepsy, which is characterized by square-wave bursting properties.

A Rare Case of Prosopagnosia Related to Intracranial Hemorrhage.

Prosopagnosia describes the inability to recognize others by their faces, which may be hereditary or acquired. Acquired cases result from intracranial lesions such as intracranial hemorrhage or ischemia. This case demonstrates acquired prosopagnosia secondary to an intracranial hemorrhage and thus exemplifies the importance of early symptom recognition for appropriate diagnosis and management.

A taxonomy of seizure dynamotypes.

Seizures are a disruption of normal brain activity present across a vast range of species and conditions. We introduce an organizing principle that leads to the first objective Taxonomy of Seizure Dynamics (TSD) based on bifurcation theory. The 'dynamotype' of a seizure is the dynamic composition that defines its observable characteristics, including how it starts, evolves and ends.

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress.

The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (SPM) techniques.

Electron trapping at SiO/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis.

Studying the electrical and structural properties of the interface of the gate oxide (SiO) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimising the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling.

Fast-Slow Bursters in the Unfolding of a High Codimension Singularity and the Ultra-slow Transitions of Classes.

Bursting is a phenomenon found in a variety of physical and biological systems. For example, in neuroscience, bursting is believed to play a key role in the way information is transferred in the nervous system. In this work, we propose a model that, appropriately tuned, can display several types of bursting behaviors.

Analytical Operations Relate Structural and Functional Connectivity in the Brain.

Resting-state large-scale brain models vary in the amount of biological elements they incorporate and in the way they are being tested. One might expect that the more realistic the model is, the closer it should reproduce real functional data. It has been shown, instead, that when linear correlation across long BOLD fMRI time-series is used as a measure for functional connectivity (FC) to compare simulated and real data, a simple model performs just as well, or even better, than more sophisticated ones.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC.

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM.The characteristics of the contacts were significantly affected by the roughness of the underlying SiC.