Excitation diffusion in GeGaSe and GeGaS glasses heavily doped with Er3+.

Using the photoluminescence from GeGaSe:Er to pump GeGaS:Er, we examine the efficiency of light trapping. By measuring the photoluminescence decay time in powdered materials with varying particle size, we are able to exclude the influence of light trapping and to pinpoint the effect of self-quenching. The critical concentrations of Er for efficient self-quenching are determined by fitting experimental data to existing models.

The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors.

Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 microm and the blocking layer thicknesses varied from 1 to 51 microm.

Ghosting caused by bulk charge trapping in direct conversion flat-panel detectors using amorphous selenium.

Direct flat-panel detectors using amorphous selenium (a-Se) x-ray photoconductors are gaining wide-spread clinical use. The goal of our investigation is to understand the physical mechanisms responsible for ghosting, i.e.

Strong Bragg gratings photoinduced by 633-nm illumination in evaporated As2Se3 thin films.

Bragg gratings are used in several photonic devices to reflect, and thus to isolate, specific wavelengths of light. Gratings can be photoinduced in chalcogenide glasses by illumination of bandgap light in an interference pattern. We used holographic interferometry to create Bragg gratings in amorphous As2Se3 thin films with a period of 0.