Microcantilever-integrated photonic circuits for broadband laser beam scanning.

Laser beam scanning is central to many applications, including displays, microscopy, three-dimensional mapping, and quantum information. Reducing the scanners to microchip form factors has spurred the development of very-large-scale photonic integrated circuits of optical phased arrays and focal plane switched arrays. An outstanding challenge remains to simultaneously achieve a compact footprint, broad wavelength operation, and low power consumption.

Monolithically integrated, broadband, high-efficiency silicon nitride-on-silicon waveguide photodetectors in a visible-light integrated photonics platform.

Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon.

Multicore fibers with 10 and 16 single-mode cores for the visible spectrum.

We report multicore fibers (MCFs) with 10 and 16 linearly distributed cores with single-mode operation in the visible spectrum. The average propagation loss of the cores is 0.06 dB/m at λ = 445 nm and < 0.

Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits.

We report on the design, fabrication and testing of three types of coupling structures for hybrid chalcogenide glass GeSbS-Silicon (GeSbS-Si) photonic integrated circuit platforms. The first type is a fully etched GeSbS grating coupler defined directly in the GeSbS film. Coupling losses of 5.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested.

High-speed resonantly enhanced silicon photonics modulator with a large operating temperature range.

We present a novel resonant Mach-Zehnder modulator whose arms are each loaded with five identical resonators. Size and power consumption are aggressively reduced compared to conventional modulators based on linear phase shifters. At the same time, a large optical bandwidth of 3.

Low V(π) Silicon photonics modulators with highly linear epitaxially grown phase shifters.

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.

Silicon photonics plasma-modulators with advanced transmission line design.

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming the analog bandwidth limitations arising from cross-talk between signal lines in push-pull modulators and reducing the linear losses of the transmission lines. We experimentally validate the concepts and demonstrate an E/O -3 dBe bandwidth of 16 GHz with a 4V drive voltage (in dual drive configuration) and 8.8 dB on-chip insertion losses.