Publications by authors named "Sadao Momota"

Radioactive cesium released into the atmosphere caused by the Fukushima Dai-ichi Nuclear Power Plant accident in March 2011 has contaminated the surrounding area. We confirmed the applicability of in-situ methods to evaluate the depth distribution of Cs by employing the ratio of Compton-scattering and photo-peak components (r) obtained from measured gamma-ray spectra. In the present study, we applied the in-situ method to farmlands in Fukushima Prefecture whose sites were disturbed by decontamination and plowing operations.

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A tractor-based robot with the capability of real-time assessing and visualizing the radioactive material density and fertility distribution of farmlands has been developed to accelerate the recovery process of the farmlands suffered by the accident of the Fukushima Daiichi Nuclear Power Plant (FDNPP). In a field test at a decontaminated farmland near FDNPP, within-field heterogeneities of soil contamination and fertility are clarified almost in real-time. Results obtained by this robot are consistent with the map by the conventional soil sampling or the history of decontamination activities.

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Article Synopsis
  • Ion implantation can cause a swelling phenomenon on the surface of silicon crystals, which was explored in this study by irradiating with an argon beam under different parameters like fluence, charge, and energy.
  • The research found that the swelling height increases with higher fluencies and energy levels of the Ar(4+) beam, indicating a correlation between these factors and the swelling effect.
  • The findings suggest that the mechanisms behind this swelling are related to ion-beam induced defects, and the stable swelling structures could have potential applications in creating 3-D nanostructures.
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In various fields of nanotechnology, the importance of nanoscale three-dimensional (3D) structures is increasing. In order to develop an efficient process to fabricate nanoscale 3D structures, we have applied highly charged ion (HCI) beams to the ion-beam lithography (IBL) technique. Ar-ion beams with various charge states (1+ to 9+) were applied to fabricate spin on glass (SOG) and Si by means of the IBL technique.

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