Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

[This corrects the article DOI: 10.1039/D1NA00221J.].

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates.

GaN-on-diamond is a promising route towards reliable high-power transistor devices with outstanding performances due to better heat management, replacing common GaN-on-SiC technologies. Nevertheless, the implementation of GaN-on-diamond remains challenging. In this work, the selective area growth of GaN nanostructures on cost-efficient, large-scale available heteroepitaxial diamond (001) substrates by means of plasma-assisted molecular beam epitaxy is investigated.

Selectively grown GaN nanowalls and nanogrids for photocatalysis: growth and optical properties.

In this work, the selective area growth of GaN nanowalls and nanogrids on sapphire and GaN on sapphire by molecular beam epitaxy is investigated. We demonstrate the fabrication of homogeneous GaN nanowall arrays with different widths, distances and specific crystallographic side facets. Photoluminescence spectroscopy of as-grown GaN nanowalls reveals a high crystal quality and low defect density.