Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS Memristive Devices.

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation.