Rare earth doped zinc oxide nanowires.

Zinc oxide (ZnO) nanowires were grown via thermal transport and subsequently doped with different concentrations of Tm, Yb, and Eu using ion implantation and post annealing. High ion fluences lead to morphology changes due to sputtering; however, freestanding nanowires become less damaged compared to those attached to substrates. No other phases like rare earth (RE) oxides were detected, no amorphization occurs in any sample, and homogeneous doping with the desired concentrations was achieved.

Doped ZnO nanowires obtained by thermal annealing.

Doped ZnO nanowires were prepared in a very simple and inexpensive thermal annealing method using ZnSe nanowires as a precursor. As doped, P doped, and As/P codoped ZnO nanowires were obtained in this method. X-ray diffraction shows that the zincblende ZnSe nanowires were converted to doped wurtzite ZnO nanowires.

Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties.

Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the [Formula: see text] direction.

Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition.

ZnCdSe alloy nanowires were successfully grown on the GaAs (100) substrate by metalorganic chemical vapor deposition using Au as a catalyst. The nanowires display two distinct types of morphology. The majority of them are straight, uniform in diameter, and have a smooth surface.

A simple route to porous ZnO and ZnCdO nanowires.

Porous ZnO nanowires were obtained in an inexpensive and simple way by thermally oxidizing ZnSe nanowires in air. The morphologies of the precursor and resulted nanowires are almost identical. X-ray diffraction and energy-dispersive X-ray spectroscopy reveal that the zinc blende ZnSe nanowires were transformed into wurtzite ZnO nanowires after oxidation.

Raman study of calcium-induced fusion and molecular segregation of phosphatidylserine/dimyristoyl phosphatidylcholine-d54 membranes.

Raman spectroscopy has been used to study the effect of Ca2+ on the molecular properties of model membranes consisting of mistures of phosphatidylserine and dimyristoyl phosphatidylcholine-d54. The I2880/I2935 intensity ratio associated with the C-H stretching modes is used to monitor the phosphatidylserine molecules, while the linewidth at 2103 cm-1 associated with the C-2H stretching modes is used for the dimyristoyl phosphatidyl-choline-d54 molecules. Membranes containing phosphatidylserine and dimyristoyl phosphatidylcholine-d54 at a molar ratio of 1 : 2 show evidence of initial immiscibility, which is further enhanced by the addition of Ca2+.

Reversibility of sodium-induced aggregation of sonicated phosphatidylserine vesicles.

The kinetics of sodium-induced aggregation of sonicated phosphatidylserine vesicles has been studied as a function of sodium concentration and temperature. The concentration threshold for aggregation induced by monovalent sodium has been found to be 550 mM sodium by stopped-flow rapid-mixing techniques. This aggregation is completely reversible to changes in sodium ion concentration and to changes in temperature.