Anomalous Decay of Quantum Resistance Oscillations of 2D Helical Electrons in Magnetic Field.

Shubnikov de Haas resistance oscillations of highly mobile two dimensional helical electrons propagating on a conducting surface of strained HgTe 3D topological insulator are studied in magnetic fields B tilted by angle θ from the normal to the conducting layer. Strong decrease of oscillation amplitude A is observed with the tilt: [Formula: see text], where ξ is a constant. Evolution of the oscillations with temperature T shows that the parameter [Formula: see text] contains two terms: [Formula: see text].

Dynamic nuclear polarization and nuclear magnetic resonance in the vicinity of edge states of a 2DES in GaAs quantum wells.

Nuclear magnetic resonance is detected via the in-plane conductivity of a two-dimensional electron system at unity Landau level filling factor in the regime of the quantum Hall effect in narrow and wide quantum wells. The NMR is spatially selective to nuclei with a coupling to electrons in the current carrying edge states at the perimeter of the 2DES. Interpretation of the electron-nuclear double resonance signals is facilitated by numerical simulations.

Scaling of the magnetoconductivity of silicon MOSFETs: evidence for a quantum phase transition in two dimensions.

For a broad range of electron densities n and temperatures T, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFETs can be scaled onto a universal curve with a single parameter H(sigma)(n,T), where H(sigma) obeys the empirical relation H(sigma) = A(n) [Delta(n)(2)+T2](1/2). The characteristic energy k(B)Delta associated with the magnetic field dependence of the conductivity decreases with decreasing density, and extrapolates to 0 at a critical density n(0), signaling the approach to a zero-temperature quantum phase transition. We show that H(sigma) = AT for densities near n(0).

Small-angle shubnikov-de haas measurements in a 2D electron system: the effect of a strong In-plane magnetic field.

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H View Article and Find Full Text PDF