Publications by authors named "S Wissberg"

We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.

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Microfluidic chips provide a powerful platform for high-throughput screening of diverse biophysical systems. The most prevalent detection methods are fluorescence based. Developing new readout techniques for microfluidics focusing on quantitative information in the low signal regime is desirable.

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Scanning superconducting quantum interference device (SQUID) microscopy is a powerful tool for investigating electronic states at surfaces and interfaces by mapping their magnetic signal. SQUID operation requires cryogenic temperatures, which are typically achieved by immersing the cryostat in liquid helium. Making a transition to cryogen free systems is desirable, but has been challenging, as electric noise and vibrations are increased in such systems.

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Local, deterministic manipulation of individual vortices in type 2 superconductors is challenging. The ability to control the position of individual vortices is necessary in order to study how vortices interact with each other, with the lattice, and with other magnetic objects. Here, we present a protocol for vortex manipulation in thin superconducting films by local contact, without applying current or magnetic field.

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The metal-insulator transition (MIT) properties of correlated oxides thin films, such as VO2, are dramatically affected by strain induced at the interface with the substrate, which usually changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum deposition thickness required for a significant MIT to appear, around 60 nm. We show that in these thicker films an interface layer develops, which accompanies the relaxation of film strain and enhanced electronic transition.

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