Comparison of the Material Quality of AlInN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering.

AlInN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlInN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively.

AlInN on Si (100) Solar Cells (x = 0-0.56) Deposited by RF Sputtering.

We investigate the photovoltaic performance of solar cells based on n-AlInN (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The AlInN layers own an optical bandgap absorption edge tuneable from 1.

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.

We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-p(z) intraband absorption in the QDs.