Nanostructured Oxide (SnO, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature.

Previous studies have shown that undoped and doped SnO thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO and F-doped SnO (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation.

Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer.

Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemical-bath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device.

Role of solution pH on the microstructural properties of spin coated cobalt oxide thin films.

Cobalt Oxide (Co3o4) thin films have been successfully coated onto glass substrates at various solution pH by sol-gel spin coating technique. The film thickness was estimated using weight gain method and it revealed that the film thickness increased with solution pH values. The prepared film structural, morphological, optical and electrical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis-NIR spectrophotometer and Vander Pau method, respectively.

High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers.

Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep.

Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD.