Growth, spectroscopy, and laser characterization of Er:KGdYbY(WO) epitaxial layers.

We report on the composition of Er-doped KGdYbY(WO) layers to be grown onto undoped KY(WO) substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er(1.3  at. %):KGdYbY(WO) epitaxial layers with thickness up to 180 μm.

Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation.

An investigation of Tm-Ho energy transfer in Tm(5at.%),Ho(0.4at.

Femtosecond pulse operation of a Tm,Ho-codoped crystalline laser near 2 microm.

We demonstrate, for the first time to our knowledge, femtosecond-regime mode locking of a Tm,Ho-codoped crystalline laser operating in the 2 microm spectral region. Transform-limited 570 fs pulses were generated at 2055 nm by a Tm,Ho:KY(WO(4))(2) laser that produced an average output power of 130 mW at a pulse repetition frequency of 118 MHz. Mode locking was achieved using an ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror.

Spectroscopy and femtosecond laser performance of Yb3+:YAlO3 crystal.

We report what we believe to be the first demonstration of cw and passively mode-locked Yb(3+):YAlO(3) (Yb:YAP) laser operation under diode pumping. Spectroscopic properties of a 0.6 at.

Efficient 1 W continuous-wave diode-pumped Er,Yb:YAl3(BO3)4 laser.

We report the spectroscopy and high-power continuous-wave (CW) diode-pumped laser operation of Er:Yb:YAl3(BO3) crystal. Absorption and stimulated emission spectra, emission lifetimes, and efficiency of energy transfer from Yb3+ to Er3+ ions were determined. A CW Er:Yb:YAB laser emitting at 1602, 1555, and 1531 nm with output power as high as 1W and slope efficiency up to 35% was demonstrated.