Heterogeneous integration of GaInAsSb-GaSb photodiodes on SOI photonic integrated circuits for SWIR applications.

We demonstrate the heterogeneous integration of GaInAsSb-GaSb photodiodes on 220 nm SOI photonic integrated circuits (PICs) using the micro-transfer-printing (μTP) technology, for operation in the short-wave infrared (SWIR) wavelength region. Utilizing an evanescent coupling scheme between a silicon waveguide and a III-V structure, the device exhibits a room temperature responsivity of 1.23 and 1.

Micro-transfer-printed narrow-linewidth III-V-on-Si double laser structure with a combined 110 nm tuning range.

In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si double laser structure with more than a 110 nm wavelength tuning range realized using micro-transfer printing (µTP) technology. Two types of pre-fabricated III-V semiconductor optical amplifiers (SOAs) with a photoluminescence (PL) peak around 1500 nm and 1550 nm are micro-transfer printed on two silicon laser cavities. The laser cavities are fabricated in imec's silicon photonics (SiPh) pilot line on 200 mm silicon-on-insulator (SOI) wafers with a 400 nm thick silicon device layer.

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications.

We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.

Integration of etched facet, electrically pumped, C-band Fabry-Pérot lasers on a silicon photonic integrated circuit by transfer printing.

We report on the heterogeneous integration of electrically pumped InP Fabry-Pérot lasers on a SOI photonic integrated circuit by transfer printing. Transfer printing is a promising micromanipulation technique that allows the heterogeneous integration of optical and electronic components realized on their native substrate onto a target substrate with efficient use of the source material, in a way that can be scaled to parallel manipulation and that allows mixing components from different sources onto the same target. We pre-process transfer printable etched facet Fabry-Pérot lasers on their native InP substrate, transfer print them into a trench defined in an SOI photonic chip and post-process the printed lasers on the target substrate.

1.3 μm InAs/GaAs quantum dot DFB laser integrated on a Si waveguide circuit by means of adhesive die-to-wafer bonding.

In this paper we report a single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. Single mode lasing around 1300 nm with a side-mode suppression ratio higher than 40 dB is demonstrated.