Publications by authors named "S Tobbeche"

We have developed equations taking into account both multiple-trapping and hopping processes for describing transport phenomena in disordered semiconductors. These equations have been introduced into a numerical simulation to model the steady state dark conductivity and photoconductivity as well as the modulated photoconductivity. The influence of parameters such as the density of states and attempt-to-hop frequency on the results of these experiments has been investigated.

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A program of simulation and optimization is developed for the case of cyclic activation analysis of short-lived isotopes with 14-MeV neutrons. The background line under the photopeaks of interest is simulated using Zikovsky's model. The reliability of the program is checked on real conditions with a geological reference sample "Soil 5" provided by the IAEA.

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