We have developed equations taking into account both multiple-trapping and hopping processes for describing transport phenomena in disordered semiconductors. These equations have been introduced into a numerical simulation to model the steady state dark conductivity and photoconductivity as well as the modulated photoconductivity. The influence of parameters such as the density of states and attempt-to-hop frequency on the results of these experiments has been investigated.
View Article and Find Full Text PDFA program of simulation and optimization is developed for the case of cyclic activation analysis of short-lived isotopes with 14-MeV neutrons. The background line under the photopeaks of interest is simulated using Zikovsky's model. The reliability of the program is checked on real conditions with a geological reference sample "Soil 5" provided by the IAEA.
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